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Imagem Modelo Preço Número Existências Fabricante Descrever Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink) High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ)
IR2112PBF
Empresa
$3.4600
Ver
RFQ
2,293
Disponível EM stock
Infineon Technologies IC MOSFET DVR HI/LO SIDE 14-DIP - Active Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 250mA, 500mA 600V 80ns, 40ns
IR2112
Ver
RFQ
3,104
Disponível EM stock
Infineon Technologies IC MOSFET DRVR HI/LO SIDE 14-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 250mA, 500mA 600V 80ns, 40ns
IR2112PBF
Empresa
$3.4600
Ver
RFQ
2,293
Disponível EM stock
Infineon Technologies IC MOSFET DVR HI/LO SIDE 14-DIP - Active Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 250mA, 500mA 600V 80ns, 40ns
IR2112
Ver
RFQ
3,104
Disponível EM stock
Infineon Technologies IC MOSFET DRVR HI/LO SIDE 14-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 250mA, 500mA 600V 80ns, 40ns
IR2112PBF
Empresa
$3.4600
Ver
RFQ
2,293
Disponível EM stock
Infineon Technologies IC MOSFET DVR HI/LO SIDE 14-DIP - Active Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 250mA, 500mA 600V 80ns, 40ns
IR2112
Ver
RFQ
3,104
Disponível EM stock
Infineon Technologies IC MOSFET DRVR HI/LO SIDE 14-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm) 14-DIP 10 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 250mA, 500mA 600V 80ns, 40ns