Estabelecer UMA plataforma de negociação fiável para Fabricantes e fornecedores globais.
5 Produto
Imagem Modelo Preço Número Existências Fabricante Descrever Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink) High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ)
IR2122
Ver
RFQ
3,217
Disponível EM stock
Infineon Technologies IC MOSFET DRIVER HIGH-SIDE 8-DIP - Obsolete Tube Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 13 V ~ 20 V Single High-Side 1 IGBT, N-Channel MOSFET 0.8V, 3V 130mA, 130mA 600V 250ns, 250ns
IR2122
Ver
RFQ
3,217
Disponível EM stock
Infineon Technologies IC MOSFET DRIVER HIGH-SIDE 8-DIP - Obsolete Tube Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 13 V ~ 20 V Single High-Side 1 IGBT, N-Channel MOSFET 0.8V, 3V 130mA, 130mA 600V 250ns, 250ns
Default Photo
Ver
RFQ
Richtek USA Inc. IC HI-SIDE MOSFET SWITCH DIP8   Obsolete   Non-Inverting -40°C ~ 125°C (TA) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 13 V ~ 20 V Independent High-Side or Low-Side 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 300mA, 600mA 600V 70ns, 35ns
Default Photo
Ver
RFQ
Richtek USA Inc. IC HI-SIDE MOSFET SWITCH DIP8   Obsolete   Non-Inverting -40°C ~ 125°C (TA) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 13 V ~ 20 V Independent High-Side or Low-Side 2 IGBT, N-Channel MOSFET 0.8V, 2.5V 300mA, 600mA 600V 70ns, 35ns
IR2122
Ver
RFQ
3,217
Disponível EM stock
Infineon Technologies IC MOSFET DRIVER HIGH-SIDE 8-DIP - Obsolete Tube Inverting -40°C ~ 150°C (TJ) Through Hole 8-DIP (0.300", 7.62mm) 8-DIP 13 V ~ 20 V Single High-Side 1 IGBT, N-Channel MOSFET 0.8V, 3V 130mA, 130mA 600V 250ns, 250ns