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Imagem Modelo Preço Número Existências Fabricante Descrever Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink) High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ)
IR2131
Ver
RFQ
1,831
Disponível EM stock
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP - Obsolete Tube Inverting -40°C ~ 150°C (TJ) Through Hole 28-DIP (0.600", 15.24mm) 28-PDIP 10 V ~ 20 V Independent Half-Bridge 6 IGBT, N-Channel MOSFET 0.8V, 2.2V 250mA, 500mA 600V 80ns, 40ns
IR2131PBF
Empresa
$4.9896
Ver
RFQ
3,637
Disponível EM stock
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP - Active Tube Inverting -40°C ~ 150°C (TJ) Through Hole 28-DIP (0.600", 15.24mm) 28-PDIP 10 V ~ 20 V Independent Half-Bridge 6 IGBT, N-Channel MOSFET 0.8V, 2.2V 250mA, 500mA 600V 80ns, 40ns
IR2131
Ver
RFQ
1,831
Disponível EM stock
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP - Obsolete Tube Inverting -40°C ~ 150°C (TJ) Through Hole 28-DIP (0.600", 15.24mm) 28-PDIP 10 V ~ 20 V Independent Half-Bridge 6 IGBT, N-Channel MOSFET 0.8V, 2.2V 250mA, 500mA 600V 80ns, 40ns
IR2131PBF
Empresa
$4.9896
Ver
RFQ
3,637
Disponível EM stock
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP - Active Tube Inverting -40°C ~ 150°C (TJ) Through Hole 28-DIP (0.600", 15.24mm) 28-PDIP 10 V ~ 20 V Independent Half-Bridge 6 IGBT, N-Channel MOSFET 0.8V, 2.2V 250mA, 500mA 600V 80ns, 40ns
IR2131
Ver
RFQ
1,831
Disponível EM stock
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP - Obsolete Tube Inverting -40°C ~ 150°C (TJ) Through Hole 28-DIP (0.600", 15.24mm) 28-PDIP 10 V ~ 20 V Independent Half-Bridge 6 IGBT, N-Channel MOSFET 0.8V, 2.2V 250mA, 500mA 600V 80ns, 40ns
IR2131PBF
Empresa
$4.9896
Ver
RFQ
3,637
Disponível EM stock
Infineon Technologies IC DRIVER BRIDGE 3-PHASE 28-DIP - Active Tube Inverting -40°C ~ 150°C (TJ) Through Hole 28-DIP (0.600", 15.24mm) 28-PDIP 10 V ~ 20 V Independent Half-Bridge 6 IGBT, N-Channel MOSFET 0.8V, 2.2V 250mA, 500mA 600V 80ns, 40ns