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High Side Voltage - Max (Bootstrap) :
12 Produto
Imagem Modelo Preço Número Existências Fabricante Descrever Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Supplier Device Package Voltage - Supply Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink) High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ)
IR2110-2PBF
Ver
RFQ
1,829
Disponível EM stock
Infineon Technologies IC DRIVER HIGH/LOW SIDE 14-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm), 12 Leads 14-PDIP 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 2A, 2A 500V 25ns, 17ns
98-0119PBF
Ver
RFQ
1,601
Disponível EM stock
Infineon Technologies IC MOSFET DRVR HI/LO SIDE 16DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm), 12 Leads 14-PDIP 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 2A, 2A 600V 25ns, 17ns
IR2113-2
Ver
RFQ
1,441
Disponível EM stock
Infineon Technologies IC MOSFET DRVR HI/LO SIDE 16-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm), 12 Leads 14-PDIP 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 2A, 2A 600V 25ns, 17ns
IR2110-2
Ver
RFQ
603
Disponível EM stock
Infineon Technologies IC DRIVER HIGH/LOW SIDE 14-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm), 12 Leads 14-PDIP 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 2A, 2A 500V 25ns, 17ns
IR2110-2PBF
Ver
RFQ
1,829
Disponível EM stock
Infineon Technologies IC DRIVER HIGH/LOW SIDE 14-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm), 12 Leads 14-PDIP 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 2A, 2A 500V 25ns, 17ns
98-0119PBF
Ver
RFQ
1,601
Disponível EM stock
Infineon Technologies IC MOSFET DRVR HI/LO SIDE 16DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm), 12 Leads 14-PDIP 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 2A, 2A 600V 25ns, 17ns
IR2113-2
Ver
RFQ
1,441
Disponível EM stock
Infineon Technologies IC MOSFET DRVR HI/LO SIDE 16-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm), 12 Leads 14-PDIP 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 2A, 2A 600V 25ns, 17ns
IR2110-2
Ver
RFQ
603
Disponível EM stock
Infineon Technologies IC DRIVER HIGH/LOW SIDE 14-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm), 12 Leads 14-PDIP 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 2A, 2A 500V 25ns, 17ns
IR2110-2PBF
Ver
RFQ
1,829
Disponível EM stock
Infineon Technologies IC DRIVER HIGH/LOW SIDE 14-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm), 12 Leads 14-PDIP 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 2A, 2A 500V 25ns, 17ns
98-0119PBF
Ver
RFQ
1,601
Disponível EM stock
Infineon Technologies IC MOSFET DRVR HI/LO SIDE 16DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm), 12 Leads 14-PDIP 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 2A, 2A 600V 25ns, 17ns
IR2113-2
Ver
RFQ
1,441
Disponível EM stock
Infineon Technologies IC MOSFET DRVR HI/LO SIDE 16-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm), 12 Leads 14-PDIP 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 2A, 2A 600V 25ns, 17ns
IR2110-2
Ver
RFQ
603
Disponível EM stock
Infineon Technologies IC DRIVER HIGH/LOW SIDE 14-DIP - Obsolete Tube Non-Inverting -40°C ~ 150°C (TJ) Through Hole 14-DIP (0.300", 7.62mm), 12 Leads 14-PDIP 3.3 V ~ 20 V Independent Half-Bridge 2 IGBT, N-Channel MOSFET 6V, 9.5V 2A, 2A 500V 25ns, 17ns