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R5F100GEAFB#10

Fabricante
Renesas Electronics
Classificação do Produto
Hot Sale
Descrever
 Data flash memory: 4 KB to 8 KB  Back ground operation (BGO): Instructions can be executed from the program memory while rewriting the data flash memory.  Number of rewrites: 1,000,000 times (TYP.)  Voltage of rewrites: VDD = 1.8 to 5.5 V
The R5F100GEAFB#10,from Renesas Electronics,is Hot Sale.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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Acções:
12,000
Ordem mínima:
0
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