- Fabricante :
- Operating Temperature :
- Package / Case :
- Frequency Range :
- Supplier Device Package :
- Voltage - Supply :
- RF Type :
- Test Frequency :
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5 Produto
| Imagem | Modelo | Preço | Número | Existências | Fabricante | Descrever | Part Status | Operating Temperature | Package / Case | Impedance | Frequency Range | Supplier Device Package | Voltage - Supply | Circuit | Topology | ion Loss | P1dB | RF Type | Test Frequency | Isolation | IIP3 | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ver | Analog Devices Inc. | LOW ION LOSS, SPDT, 3.5GHZ | Active | -40°C ~ 105°C | 32-VFQFN Exposed Pad | 50 Ohm | 700MHz ~ 4GHz | 32-LFCSP (5x5) | 4.5 V ~ 5.4 V | SPDT | Reflective | 0.9dB | 47dBm | General Purpose | 4GHz | 35dB | 70dBm | |||
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Ver | Infineon Technologies | CMOS SWITCH | Active | -40°C ~ 85°C (TA) | 12-UFQFN Exposed Pad | 50 Ohm | 100MHz ~ 3.8GHz | PG-ATSLP-12-12 | 1.65 V ~ 1.95 V | 4P4T | 0.9dB | GSM, LTE, W-CDMA | 3.4GHz ~ 3.8GHz | 36dB | 61dBm | |||||
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Ver | Infineon Technologies | CMOS SWITCH | Active | -40°C ~ 85°C (TA) | 12-UFQFN Exposed Pad | 50 Ohm | 100MHz ~ 3.8GHz | PG-ATSLP-12-12 | 1.65 V ~ 1.95 V | 4P4T | 0.9dB | GSM, LTE, W-CDMA | 3.4GHz ~ 3.8GHz | 36dB | 61dBm | |||||
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Ver | Infineon Technologies | CMOS SWITCH | Active | -40°C ~ 85°C (TA) | 12-UFQFN Exposed Pad | 50 Ohm | 100MHz ~ 3.8GHz | PG-ATSLP-12-12 | 1.65 V ~ 1.95 V | 4P4T | 0.9dB | GSM, LTE, W-CDMA | 3.4GHz ~ 3.8GHz | 36dB | 61dBm | |||||
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Ver |
6
Disponível EM stock
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Analog Devices Inc. | LOW ION LOSS,SPDT,3.5GHZ,4 | Active | -40°C ~ 105°C | 32-VFQFN Exposed Pad | 50 Ohm | 700MHz ~ 4GHz | 32-LFCSP (5x5) | 4.5 V ~ 5.4 V | SPDT | Reflective | 0.9dB | 47dBm | General Purpose | 4GHz | 35dB | 70dBm |
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